Tibetan Word Segmentation as Syllable Tagging Using Conditional Random Field

In this paper, we proposed a novel approach for Tibetan word segmentation using the conditional random field. We reformulate the segmentation as a syllable tagging problem. The approach labels each syllable with a word-internal position tag, and combines syllable(s) into words according to their tags. As there is no public available Tibetan word segmentation corpus, the training corpus is generated by another segmenter which has an F-score of 96.94% on the test set. Two feature template sets namely TMPT-6 and TMPT-10 are used and compared, and the result shows that the former is better. Experiments also show that larger training set improves the performance significantly. Trained on a set of 131,903 sentences, the segmenter achieves an F-score of 95.12% on the test set of 1,000 sentences. © 2011 by Huidan Liu, Minghua Nuo, Longlong Ma, Jian Wu, and Yeping He.In this paper, we proposed a novel approach for Tibetan word segmentation using the conditional random field. We reformulate the segmentation as a syllable tagging problem. The approach labels each syllable with a word-internal position tag, and combines syllable(s) into words according to their tags. As there is no public available Tibetan word segmentation corpus, the training corpus is generated by another segmenter which has an F-score of 96.94% on the test set. Two feature template sets namely TMPT-6 and TMPT-10 are used and compared, and the result shows that the former is better. Experiments also show that larger training set improves the performance significantly. Trained on a set of 131,903 sentences, the segmenter achieves an F-score of 95.12% on the test set of 1,000 sentences. © 2011 by Huidan Liu, Minghua Nuo, Longlong Ma, Jian Wu, and Yeping He

900 V Reverse-Blocking GaN-on-Si MOSHEMTs With a Hybrid Tri-Anode Schottky Drain

In this letter, we present high-performance GaN-on-Si metal-oxide-semiconductor high electron mobility transistors with record reverse-blocking (RB) capability. By replacing the conventional ohmic drain with a hybrid tri-anode Schottky drain, a high reverse breakdown voltage (V-B(R)) of -900 V was achieved (at 1 mu A/mm with grounded substrate), along with a small reverse leakage current (I-R) of similar to 20 nA/mm at -750 V. The devices also presented a small turn-ON voltage (V-ON) of 0.58 +/- 0.02 V, a small increase in forward voltage (Delta V-F) of similar to 0.8 V, a high ON/OFF ratio over 1010, and a high forward breakdown voltage (V-B(F)) of 800 V at 20 nA/mm with grounded substrate. These results demonstrate a new milestone for RB GaN transistors, and open enormous opportunities for integrated GaN power devices

The Attenuation of Moutan Cortex on Oxidative Stress for Renal Injury in AGEs-Induced Mesangial Cell Dysfunction and Streptozotocin-Induced Diabetic Nephropathy Rats

Oxidative stress (OS) has been regarded as one of the major pathogeneses of diabetic nephropathy (DN) through damaging kidney which is associated with renal cells dysfunction. The aim of this study was to investigate whether Moutan Cortex (MC) could protect kidney function against oxidative stress in vitro or in vivo. The compounds in MC extract were analyzed by HPLC-ESI-MS. High-glucose-fat diet and STZ (30 mg kg−1) were used to induce DN rats model, while 200 μg mL−1 AGEs were for HBZY-1 mesangial cell damage. The treatment with MC could significantly increase the activity of SOD, glutathione peroxidase (GSH-PX), and catalase (CAT). However, lipid peroxidation malondialdehyde (MDA) was reduced markedly in vitro or in vivo. Furthermore, MC decreased markedly the levels of blood glucose, serum creatinine, and urine protein in DN rats. Immunohistochemical assay showed that MC downregulated significantly transforming growth factor beta 2 (TGF-β2) protein expression in renal tissue. Our data provided evidence to support this fact that MC attenuated OS in AGEs-induced mesangial cell dysfunction and also in high-glucose-fat diet and STZ-induced DN rats

Enhanced Fairness Testing via Generating Effective Initial Individual Discriminatory Instances

Fairness testing aims at mitigating unintended discrimination in the decision-making process of data-driven AI systems. Individual discrimination may occur when an AI model makes different decisions for two distinct individuals who are distinguishable solely according to protected attributes, such as age and race. Such instances reveal biased AI behaviour, and are called Individual Discriminatory Instances (IDIs). In this paper, we propose an approach for the selection of the initial seeds to generate IDIs for fairness testing. Previous studies mainly used random initial seeds to this end. However this phase is crucial, as these seeds are the basis of the follow-up IDIs generation. We dubbed our proposed seed selection approach I&D. It generates a large number of initial IDIs exhibiting a great diversity, aiming at improving the overall performance of fairness testing. Our empirical study reveal that I&D is able to produce a larger number of IDIs with respect to four state-of-the-art seed generation approaches, generating 1.68X more IDIs on average. Moreover, we compare the use of I&D to train machine learning models and find that using I&D reduces the number of remaining IDIs by 29% when compared to the state-of-the-art, thus indicating that I&D is effective for improving model fairnessComment: 19 pages, 7 figure

Efficacy of a smartphone-based care support programme in improving post-traumatic stress in families with childhood cancer: Protocol of a randomised controlled trial

INTRODUCTION: Diagnosis and treatment represent distressing experiences for the families of children with cancer. Psychosocial challenges are faced by these families in China because of limited health services and resources for psychosocial oncology care. Effective interventions tailored to the knowledge level and cultural values of this population are needed. The goal of this study is to evaluate a smartphone-based care support (SBCS) programme for the families of children with cancer in China. METHODS AND ANALYSIS: A parallel randomised controlled trial will be conducted to examine the efficacy of an evidence-based and culturally tailored SBCS programme for the families of children with cancer in China. A total of 180 families will be recruited. The intervention will consist of an introduction session and four main sessions and will be conducted sequentially on a single weekend day. Participating families will be included in the intervention group. The post-traumatic stress and quality of life of families will be evaluated at baseline, during the intervention, immediately after the intervention, and 2 and 6 months after the intervention. ETHICS AND DISSEMINATION: Ethical approval for this protocol has been obtained from the Nursing and Behavioural Medicine Research Ethics Review Committee, Xiangya School of Nursing, Central South University (Protocol #: E2020125). The findings of the trial will be disseminated through conference presentations and publications in peer-reviewed journals. TRIAL REGISTRATION NUMBER: ChiCTR2000040510

Simultaneous electrical-field-effect modulation of both top and bottom Dirac surface states of epitaxial thin films of three-dimensional topological insulators

It is crucial for the studies of the transport properties and quantum effects related to Dirac surface states of three-dimensional topological insulators (3D TIs) to be able to simultaneously tune the chemical potentials of both top and bottom surfaces of a 3D TI thin film. We have realized this in molecular beam epitaxy-grown thin films of 3D TIs, as well as magnetic 3D TIs, by fabricating dual-gate structures on them. The films could be tuned between n-type and p-type by each gate alone. Combined application of two gates can reduce the carrier density of a TI film to a much lower level than with only one of them and enhance the film resistance by 10000 %, implying that Fermi level is tuned very close to the Dirac points of both top and bottom surface states without crossing any bulk band. The result promises applications of 3D TIs in field effect devices.Comment: 19 pages, 4 figures, accepted by Nano Letters, forthcomin